Nanostructuring GaN using microsphere lithography
نویسندگان
چکیده
منابع مشابه
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Proliferation of data caused by rapid increases in computer power and the rise of the internet have caused an acute need for advanced data storage technology. Patterned magnetic media and magneto-resistive random-access memory (MRAM) can potentially fulfill this need. The technique of interference lithography is examined in the context of patterning ~100 nm size features. An interferometer is d...
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ژورنال
عنوان ژورنال: Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
سال: 2008
ISSN: 1071-1023
DOI: 10.1116/1.2819265